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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 2000.07.01 Revised Date : 2001.09.06 Page No. : 1/2 HMX1225 HMM1225 0.8A 300/380 VOLTAGE SCRS IGT<200uA Description The HMX1225/HMM1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. Absolute Maximum Ratings (Ta=25C) Parameter Repetitive Peak Off State Voltage On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature Part No. HMX1225 HMM1225 Symbol VDRM VDRM IT(rms) IT(AV) VGRM IGM PG(AV) Tj Tstg Tsld Min. Max. Unit 380 V 300 V 0.8 A 0.5 A 8 V 1 A 0.1 W -40 125 C -40 125 C 250 C Test Conditions Tj=40C to 125C (RGK=1K) TC=40C Half Cycle=180,TC=40C IGR=10uA 10us max 20ms max 1.6mm from case 10s max Classification Of IGT Rank HMX1225 HMM1225 A 10-23 uA 10-23 uA C 17-55 uA 17-55 uA Electrical Characteristics (Ta=25C) Parameter Off-State Leakage Current Off-State Leakage Current On-State Voltage On-State Threshold Voltage On-State Slops Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Crtical Rate of Current Rise Gate Controlled Delay Time Commutated Turn-off Time Thermal Resistance junc.to case Thermal Resistance junc. to amb HMX1225 & HMM1225 Symbol IDRM IDRM VT VT(TO) rT IGT VGT IH IL dv/dt di/dt tgd tg Rjc Rja Min Max Unit Test Conditions 0.1 mA @VDRM (RGK=1K), Tj=125C 5 uA @VDRM (RGK=1K), Tj=25C 1.4 V at IT=0.4A, Tj=25C 2.2 V at IT=0.8A, Tj=25C 0.95 V Tj=125C 600 Ohm Tj=125C 200 uA VD=7V 0.8 V VD=7V 5 mA RGK=1K(ohm) 6 mA RGK=1K(ohm) 25 V/us VD=0.67*VDRM(RGK=1K), Tj=125C 30 A/us IG=10mA,diG/dt=0.1A/us, Tj=125C 500 ns IG=10mA,diG/dt=0.1A/us Tc=85C,VD=0.67*VDRM 200 us VR=35V,IT=IT(AV) 100 K/W 200 K/W HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-89 Dimension Spec. No. : Preliminary Data Issued Date : 2000.07.01 Revised Date : 2001.09.06 Page No. : 2/2 HMX1225 Marking: C H Date Code H MX 1225 B 1 E F G A 2 3 D Laser Marking HMM1225 Marking: I Date Code Laser Marking H MM 1225 Style: Pin 1.Gate 2.Anode 3.Cathode 3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.0141 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.52 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMX1225 & HMM1225 HSMC Product Specification |
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